i nchange semiconductor isc website isc & iscsemi is registered tr a demark 1 isc silicon npn power transistor 2 sd 900 description high breakdown voltage - : v cbo = 1500v ( min ) high switching speed low collector saturation voltage - : v ce(sat) = 5.0v( m ax.)@ i c = 4.5 a built - in damper diode minimum lot - to - lot variations for robust device performance and reliable operation applications designed for use in color tv deflection circuits. a bsolute maximum ratings (t a =25 ) symbol parameter value unit v c es co llector - e mitter v oltage 1500 v v ebo emitter - b ase v oltage 6 v i c collector c urrent - continuous 5 a i c m collector c urrent - peak 6 a p c collector p ower d issipat i on @ t c = 25 50 w t j junction temperature 150 t stg storage temp erature range - 4 5~ 150
i nchange semiconductor isc website isc & iscsemi is registered tr a demark 2 isc silicon npn power transistor 2 sd 900 electrical characteristics t c =25 v ebo emitter - b ase breakdown v oltage i e = 3 00m a ; i c = 0 6.0 v i c es collector c utoff c urrent v c e = 1500 v ; v be = 0 0.5 ma v c e ( sat ) collector - e mitter s aturation v oltage i c = 4.5 a ; i b = 1.2 a 5.0 v v be ( sat ) b ase - e mitter s aturation v oltage i c = 4.5 a ; i b = 1.2 a 1.5 v h fe dc c urrent g ain i c = 1 a; v ce = 5 v 10 40 v ecf c - e diode forward voltage i f = 6 a 3.0 v t f f all time i c = 4 a , i b1 = 1.1 a , i b 2 = 1.6 a 1.0 s
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